Germanium Avalanche Photodiodes are often used to measure optical power in the near-infrared range, particularly in cost-sensitive applications or where a large-area detector is required. Compared with similarly sized InGaAs detectors, germanium devices generally have lower shunt resistance and higher dark current, resulting in higher overall noise. As a result, they are best suited for applications where the detected signal is well above the noise floor. GPD Optoelectronics offers an “HS” series of germanium photodiodes with higher-than-typical shunt resistance to help improve performance.
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Features
- Small Diameter (40µm)
- 800nm to 1800nm Spectral Response
- Linear and Geiger Mode Operation
- High Sensitivity
- Fiber Pigtail (Single or Multi Mode), including Hi-Reliability Pigtail
- Thermoelectric Cooling Available
- Packages (TO-46 and sub-mount)
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Applications
- Optical Time Domain Reflectometer (OTDR)
- Optical Communications
- Photon Counting
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Specifications
Part Number GAV004-T46 Units Optoelectronic Characteristics @ 23 ºC ± 2 ºC Active Diameter 40 μm Spectral Response Range 0.8-1.7 μm Responsivity @ M=1 @ 1.3μm (min/typ) 0.76/0.84 A/W IDARK @ 0.9Vb (typ/max) 0.1/0.2 μA Quantum Efficiency (peak) (min/typ) 72/80 % Breakdown Voltage, VBR (Id=100μA) (min/typ/max) 20/30/40 V Capacitance @ 20V (typ/max) 0.8/1.0 pF VBR temperture coefficient (typ) 0.1 %/oC Multiplied Dark Current @ M=1 (typ) 12 Cutoff Frequency (-3dB) (min/typ) 1.5/2.0 GHz Excess Noise Figure @ BW=1MHz, M=10, Iph=2μA (typ) 0.95 Excess Noise Factor, @ 1.3μm, F=300MHz (typ) 9 Maximum Ratings @ 23 °C ± 2 °C Storage Temperture -40 to 85 °C Operating Temperture -10 to 60 °C Reverse Current 0.4 mA Forward Current 80 mA
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Packaging Capabilities
| Packaging Configurations Options | |||
| Part number | Diameter | TO-46 | Ceramic Submount |
| GAV004-XX | 40μm | ● | ● |
| Window (Other Options Available) | |||
| Molder Clear Glass | AR Coated Ball Lens | Single or Multi Mode Fiber | Aperture Cap |
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Package Outlines
