Photodiodes InGaAs Photodiodes

Extended InGaAs Photodiodes

DETAIL

Expanded Wavelength Detection

Extended InGaAs photodiodes are designed to detect longer near-infrared wavelengths beyond the cutoff of standard InGaAs devices, typically extending sensitivity to approximately 2.2–2.6 µm. This broader response allows detection in spectral regions that conventional InGaAs cannot reach, effectively bridging the gap between standard InGaAs and mid-infrared detectors.

By adjusting the material composition, extended InGaAs devices achieve wider spectral coverage while preserving many of the advantages of InGaAs technology, including high quantum efficiency and relatively fast response. Extending the cutoff wavelength, however, generally results in increased dark current, which must be carefully managed in low-noise or high-precision systems.

These photodiodes are commonly used in gas sensing, spectroscopy, environmental monitoring, and industrial process control, where access to longer NIR absorption features is important. They provide a practical balance of wavelength range, performance, and cost compared with more complex mid-infrared detector technologies.

Features
Chip active diameters from 0.3 mm to 3 mm
Extended cutoff wavelengths (1.9μm, 2.05μm, 2.2μm and 2.6μm)
High shunt resistance
Multiple window and lens options
Packages (TO-46, TO-18 or TO-5)
Thermoelectric cooled options available

Applications
Gas sensing
Hydrocarbon sensing
Flame and spark detection
FTIR
Spectroscopy
SWIR photodetection

Products

Opto/Electronic Characteristics @ 23 ºC ± 2 ºC
Part Number	Spectral response range	Photosensitive area	Peak sensitivity wavelength (typ.)	Responsivity @ λp (min./max.)	Capacitance @ 0V (typ.)	Dark Current (max.)	Package Category
N19S30-XX	1.0 – 1.9µm	0.3mm	1.75µm	0.9/1.0 A/W	60pF	0.1µA @ 1V	TO-46, TO-18
N19S50-XX	1.0 – 1.9µm	0.5mm	1.75µm	0.9/1.0 A/W	200pF	0.9µA @ 1V	TO-46, TO-18, LCC-6
N19S100-XX	1.0 – 1.9µm	1.0mm	1.75µm	0.9/1.0 A/W	600pF	4µA @ 1V	TO-46, TO-18, TO-5, LCC-6
N19S200-XX	1.0 – 1.9µm	2.0mm	1.75µm	0.9/1.0 A/W	3000pF	10µA @ 1V	TO-5, LCC-6
N19S300-XX	1.0 – 1.9µm	3.0mm	1.75µm	0.9/1.0 A/W	6750pF	22.5µA @ 0.5V	TO-5, LCC-28
N21S30-XX	1.0 – 2.1µm	0.3mm	1.9µm	0.9/1.0 A/W	80pF	0.5µA @ 1V	TO-46, TO-18
N21S50-XX	1.0 – 2.1µm	0.5mm	1.9µm	0.9/1.0 A/W	250pF	1µA @ 1V	TO-46, TO-18, LCC-6
N21S100-XX	1.0 – 2.1µm	1.0mm	1.9µm	0.9/1.0 A/W	500pF	4µA @ 1V	TO-46, TO-18, TO-5, LCC-6
N21S200-XX	1.0 – 2.1µm	2.0mm	1.9µm	0.9/1.0 A/W	1600pF	10µA @ 1V	TO-5, LCC-6
N21S300-XX	1.0 – 2.1µm	3.0mm	1.9µm	0.9/1.0 A/W	4000pF	12µA @ 0.5V	TO-5, LCC-28
N22S30-XX	1.0 – 2.3µm	0.3mm	2.0µm	0.9/1.0 A/W	90pF	1µA @ 1V	TO-46, TO-18
N22S50-XX	1.0 – 2.3µm	0.5mm	2.0µm	0.9/1.0 A/W	275pF	5µA @ 1V	TO-46, TO-18, LCC-6
N22S100-XX	1.0 – 2.3µm	1.0mm	2.0µm	0.9/1.0 A/W	1000pF	10µA @ 1V	TO-46, TO-18, TO-5, LCC-6
N22S200-XX	1.0 – 2.3µm	2.0mm	2.0µm	0.9/1.0 A/W	4000pF	40µA @ 1V	TO-5, LCC-6
N22S300-XX	1.0 – 2.3µm	3.0mm	2.0µm	0.9/1.0 A/W	8000pF	100µA @ 1V	TO-5, LCC-28
N26S30-XX	1.0 – 2.6µm	0.3mm	2.0µm	0.9/1.0 A/W	100pF	13µA @ 1V	TO-46, TO-18
N26S50-XX	1.0 – 2.6µm	0.5mm	2.0µm	0.9/1.0 A/W	270pF	20µA @ 0.5V	TO-46, TO-18, LCC-6
N26S100-XX	1.0 – 2.6µm	1.0mm	2.0µm	0.9/1.0 A/W	1000pF	80µA @ 0.5V	TO-46, TO-18, TO-5, LCC-6
N26S200-XX	1.0 – 2.6µm	2.0mm	2.0µm	0.9/1.0 A/W	4400pF	320µA @ 0.5V	TO-5, LCC-6
N26S300-XX	1.0 – 2.6µm	3.0mm	2.0µm	0.9/1.0 A/W	10000pF	500µA @ 0.5V	TO-5, LCC-28

*Low capacitance

Extended 1.9μm InGaAs Photodiode Relative Responsivity

Extended 2.05μm InGaAs Photodiode Relative Responsivity

Extended 2.2μm InGaAs Photodiode Relative Responsivity

Extended 2.6μm InGaAs Photodiode Relative Responsivity

Packaging Capabilities

Packaging Configurations
Diameter (mm)	TO Headers			Ceramic Leadless Chip Carrier
	TO-46	TO-18	TO-5	LCC-6	LCC-28
0.3	●	●
0.5	●	●		●
1	●	●	●	●
2			●	●
3			●		●
Window (Other Options Available)
Material	Molded Clear Glass			Borosilicate Glass
Thickness (mm)	0.25			0.5